US researchers have used modified vertical structures and extreme cooling to push silicon germanium (SiGe) bipolar transistor operation through 500GHz. “The motivation was to use bandgap engineering ...

Also called a "bipolar junction transistor" (BJT), it is one of two major transistor categories; the other is "field-effect transistor" (FET). Although the first transistor was bipolar and the first ...

Editor's Note: The following tutorial is one of a series of six on transistor theory by Howard Skolnik, retired Burr-Brown designer. Skolnik and Bob Dobkin, CTO of Linear Technology, will be our ...

In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...

A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz transistor for ...

The DXTN/P 78Q and 80Q series feature ultra-low VCE(sat) NPN and PNP transistors designed for demanding automotive power switching and control applications. These devices promise enhanced conduction ...

How many remote controls do you have in your home? Don’t you wish all these things were better integrated somehow, or that you could add remote control functionality to a random device? It’s a common ...

FULLER details of the new Westinghouse Electric development of a silicon carbide transistor capable of operating at above 650 deg. F were given in a paper presented at a meeting in the US of the ...

It used to be a rite of passage to be able to do the math necessary to design various bipolar transistor amplifier configurations. This doesn’t come up as often as it used to, but it is still a good ...